Electrical and structural degradation of GaN high electron mobility transistors under high-power and high-temperature Direct Current stress
نویسندگان
چکیده
Articles you may be interested in Time evolution of off-state degradation of AlGaN/GaN high electron mobility transistors Appl. On the link between electroluminescence, gate current leakage, and surface defects in AlGaN/GaN high electron mobility transistors upon off-state stress Appl. Spatial distribution of structural degradation under high-power stress in AlGaN/GaN high electron mobility transistors Appl. Evolution of structural defects associated with electrical degradation in AlGaN/GaN high electron mobility transistors Appl. The effects of processing of high-electron-mobility transistors on the strain state and the electrical properties of AlGaN/GaN structures Appl. We have stressed AlGaN/GaN HEMTs (High Electron Mobility Transistors) under high-power and high-temperature DC conditions that resulted in various levels of device degradation. Following electrical stress, we conducted a well-established three-step wet etching process to remove passiva-tion, gate and ohmic contacts so that the device surface can be examined by SEM and AFM. We have found prominent pits and trenches that have formed under the gate edge on the drain side of the device. The width and depth of the pits under the gate edge correlate with the degree of drain current degradation. In addition, we also found visible erosion under the full extent of the gate. The depth of the eroded region averaged along the gate width under the gate correlated with channel resistance degradation. Both electrical and structural analysis results indicate that device degradation under high-power DC conditions is of a similar nature as in better understood high-voltage OFF-state conditions. The recognition of a unified degradation mechanism provides impetus to the development of a degradation model with lifetime predictive capabilities for a broad range of operating conditions spanning from OFF-state to ON-state. V C 2015 AIP Publishing LLC.
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Degradation of GaN High Electron Mobility Transistors under High - power and High - temperature Stress
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